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At 22nm, the focus is first order effects
TCAD WEBINAR SERIES
Oct 6: New Features in TCAD
Sentaurus: Sept 2011 Release
TCAD NEWSLETTER
December 2011 issue available
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News
ITRI Adopts Synopsys' TCAD Sentaurus for Silicon Carbide Technology Development
Synopsys and Varian Collaborate on Process Models for Advanced Logic and Memory....
Imec and Synopsys Collaborate on 3D Stacked IC Development
Synopsys' Sentaurus TCAD Used to Simulate Solar Cell Performance....
TriQuint Semiconductor Selects Synopsys' TCAD Sentaurus for Compound....
Solar Energy Research Institute of Singapore Adopts Synopsys' Sentaurus TCAD....
Synopsys and Ovonyx Collaborate on TCAD Models for Phase Change Memory
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Articles
Simulations Enhance the Development of Power Devices
Automotive power electronics components and systems
Simulation in Photovoltaics: From Solar Cells to Full-Scale Arrays
Modeling of stress and narrow-width effects in shallow trench isolation
TCAD Enables Robust Process Development and Manufacturing
Simulation of multi-junction solar cells for performance optimization
Applying TCAD sim to PV, 3D TSVs Video Interview
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Datasheets
Sentaurus Process
Sentaurus Topography
Sentaurus Device
Raphael
Sentaurus Workbench
Sentaurus Structure Editor
TCAD For Manufacturing
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Webinars
New Features in TCAD Sentaurus: 2011 Release
Modeling Semiconductor Device Variability with TCAD
Modeling Semiconductor Reliability with TCAD
New Features in TCAD Sentaurus
Simulation of Power Devices with TCAD
Photovoltaic Simulation with TCAD and Saber
TCAD Sentaurus March 2010 Update
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Newsletters
December 2011
September 2011
June 2011
March 2011
December 2010
September 2010
June 2010
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Applications
Sentaurus Technology Template: CMOS Processing
Sentaurus Technology Template: CMOS Characterization
Simulation of CMOS Device Using Selective Epitaxial Growth Isolation and Hybrid Orientation Technique
Sentaurus Process Simulation of a 30 nm Gate-length NMOS Transistor with Hybrid Continuum and Atomistic Diffusions
Simulation of Scanning Laser Annealing in Sentaurus Process
Process and Device Simulations of Trench Capacitor Embedded 70 nm DRAM
Three-dimensional Simulations of Twin Silicon Nanowire NMOS Transistor
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