The latest release delivers new capabilities in advanced structure generation, new models in process and device simulation and new methods for modeling semiconductor device variability.
Karim El Sayed, Director, TCAD R&D, Synopsys; Sudarshan Krishnamoorthy, TCAD Technical Marketing Manager, Synopsys
Oct 06, 2011

Learn a methodology for variability analysis at the technology level combining 3D process simulation with a device simulation technique known as Impedance Field Method.
Karim El Sayed, Director, TCAD R&D, Synopsys
Jun 01, 2011

Learn how TCAD simulation can provide insight into underlying degradation mechanisms and can guide process changes to improve semiconductor reliability.
Nelson Braga, CAE Manager, Synopsys; Xiaopeng Xu, R&D Manager, Synopsys; Ilya Rumyantsev, R&D Engineer, Synopsys
Mar 30, 2011

Introduction to new features in the December 2010 release of TCAD Sentaurus. Learn about Sentaurus' new capabilities in 3D structure generation, process modeling, quantization in device physics, variability modeling and optoelectronics.
Karim El Sayed, Director, Synopsys TCAD R&D
Jan 18, 2011

A complete review of TCAD simulation of power devices from the latest trends to future outlook, including silicon-based, SiC & GaN power devices. (Japanese/English)
Ricardo Borges, Sr. Manager, TCAD Product Marketing, Synopsys
Jul 30, 2010

This webinar focuses on optimization of rear point contact solar cells using 3-D TCAD simulation and addresses system-level simulation of PV arrays
Joanne Huang, TCAD R&D Engineer & Kurt Mueller, Saber Business Development Manager, Synopsys
Jul 22, 2010

Introduction to the latest release of TCAD Sentaurus including new features and capabilities for addressing technologies such as CMOS, memory, power, analog/RF and optoelectronics.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Christoph Zechner, R&D Manager, Synopsys; Nelson Braga, CAE Manager, Synopsys; Dmitri Matveev, R&D Engineer, Synopsys
Apr 27, 2010

The latest algorithms and best practices for 3-D TCAD simulation to derive maximum benefit from the comprehensive 3-D capabilities in Sentaurus TCAD.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Simeon Simeonov, Ph.D., R&D Manager, Synopsys
Feb 24, 2010

This webinar discusses the application of TCAD to high-k/metal-gate transistors and 3-D modeling FinFET devices, focusing on the physical models and 3-D modeling techniques required to achieve successful simulations.
Synopsys
Dec 01, 2009

This webinar addresses the design and optimization of multi-junction solar cells using Synopsys' TCAD Sentaurus tools.
Synopsys
Apr 15, 2009

Thin film solar cells are currently the focus of worldwide research and development efforts aimed at bringing to market more efficient and cost effective processes and designs.
Synopsys
Aug 20, 2008

A new generation of non-volatile memory devices have kept scientists and designers busy researching and optimizing designs like SONOS memory, new materials like chalcogenide (GST) for Phase Change Memory, or means to pump charge into Nano Crystals to store information.
Synopsys
May 29, 2008

This webinar discusses the application of TCAD Sentaurus Device EMW to the electromagnetic simulation of CMOS image sensors (CIS) and charge-coupling devices (CCD).
Synopsys
Mar 20, 2008

This webinar concentrates on simulation of GaN HFET devices using TCAD Sentaurus Device including treatment of spontaneous and piezoelectric polarization effects, numerical accuracy settings, assignment of bulk and interface traps, and selection of mobility and transport models.
Synopsys
Feb 21, 2008